Advanced Display Research Center and Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
We report the structural and electrical properties of polycrystalline silicon on glass crystallized by using a CW Nd:YVO4 laser. Various microstructures appear on amorphous silicon after a scanning of the laser regardless of the crystallization process parameters such as laser power and scan speed. The crystallized region could be characterized by their grain size as 3 distinct regions; RTA-SPC (rapid thermal annealed-solid phase crystallization) region, small-grain region and SLC (sequential lateral crystallization) region with very large grains of ~10 μm. To verify its electrical properties, p-ch TFTs were fabricated on the 3 different regions. The characteristics of TFTs on SLC region were superior to those on other regions and average performances of SLC poly-Si TFTs were cm2/V s, V, S.S. = 0.5 V/dec, and pA/μm at V, respectively.
(Received May 12 2004)
(Revised June 15 2005)
(Accepted July 7 2005)
(Online publication September 14 2005)