National Integrated Optoelectronics Laboratory, Jilin University, Changchun, 130012, P.R. China
Department of Physics, Jilin University, Changchun, 130023, P.R. China
Editorial Department of Journal of Jilin University (Science Edition), Jilin University, Changchun, 130023, P.R. China
xGeO2-(1-x)SiO2 films ( ) were deposited by flame hydrolysis deposition (FHD) on Si substrates and annealed to 1150 °C for 2 h for consolidation in air. Then the films were irradiated perpendicularly to KrF excimer laser after being hydrogen loaded to enhance the photosensitivity to UV light. X-ray photoelectron spectroscopy (XPS) was used in order to characterize the purity of the films. The film was also studied using atomic force microscopy (AFM) to determine the analytical details of the microstructure. Film thickness and refractive index were measured by variable angle spectroscopic ellipsometry (VASE). The maximum positive 0.339% and negative 0.235% refractive index changes at 1550 nm were obtained after irradiation.
(Received February 4 2005)
(Revised May 14 2005)
(Accepted May 25 2005)
(Online publication October 26 2005)