Laboratoire de Physique des Matériaux, Propriétés et Analyses, Groupe Physique des Composants et Dispositifs Nanométriques, Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
Laboratoire de Photonique et Nanostructures - CNRS, Route de Nozay, 91190 Marcoussis, France
An efficient technique for determining the small-signal equivalent-circuit model of a Metal collector-up Heterojunction Bipolar Transistor (C-up MHBT) is presented. The technique employs analytically derived expressions for direct calculation of HBT T-Model equivalent circuit element values in terms of the measured S-parameters. This approach avoids errors due to uncertainty in fitting to large, over determined equivalent circuits and does not require the use of test structures and extra measurement steps to evaluate parasitics. Physically realistic results are demonstrated under various biasing conditions for the n-p-n InP/InGaAs HBT with metallic collector up structure. The agreement between the measured and model-produced data is excellent over the large frequency range and for several polarizations conditions for devices.
(Received July 5 2007)
(Revised November 22 2007)
(Accepted January 16 2008)
(Online publication April 30 2008)