The European Physical Journal Applied Physics

Semiconductors and Devices

Effect of tellurium substitution in Sn10Sb20Se70−X Te X (0 < X < 12) amorphous chalcogenide system

R. Chandera1 and R. Thangaraja1

Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar 143005, India

Abstract

The as-prepared samples of Sn10Sb20Se $_{70-X}$ Te X chalcogenide system were amorphous as evidenced by X-ray diffraction and Differential scanning calorimetry studies. The different crystalline phases emerged in annealed Sn10Sb20Se $_{70-X}$ Te X samples have been identified. Glass transition temperature T g of the as-prepared samples decreases sharply with tellurium substitution upto 2 at% and then it starts increasing upto 10 at% and decreases again on further substitution of tellurium. The change in glass transition temperature T g has been explained based on bond formation energy of different heteropolar bonds and crystalline phases obtained in the annealed samples with different tellurium contents.

(Received September 14 2008)

(Accepted April 27 2009)

(Online publication July 4 2009)

PACS:

  • 64.70.kj – Glasses;
  • 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.;
  • 64.70.ph – Nonmetallic glasses (silicates, oxides, selenides, etc.);
  • 81.70.pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis;
  • 61.05.cp – X-ray diffraction
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