The European Physical Journal Applied Physics

Table of Contents - December 2009 - Volume 48, Issue 03  

Surfaces, Interfaces and Films

Electrical properties and Kerr effect study of evaporated Fe/Si and Fe/glass thin films

B. Gheboulia1, A. Layadia1, A. Guittouma2, L. Kerkachea1, M. Benkerria1, A. Klimova3, V. Preobrazhenskya3 and P. Pernoda3

Département de Physique, Université Ferhat Abbas, 19000 Setif, Algeria

Centre de Recherche Nucléaire d'Alger (CRNA), 16000 Alger, Algeria

Joint Laboratory LEMAC,  IEMN CNRS 8520,  École Centrale de Lille,  59651 Villeneuve d'Ascq,  France

Abstract

Electrical and magnetic properties were studied for evaporated Fe thin films on glass and Si substrates. These properties were investigated by means of the four point probe and the magneto-optical Kerr effect techniques. Rutherford backscattering (RBS) and scanning electron microscopy (SEM) experiments show no interdiffusion at the interface Fe/Si for these samples. The electrical resistivity $\rho $ is found to be larger in Fe/glass than in Fe/Si for the same thickness. Diffusion at the grain boundaries seems to be the dominant factor in the $\rho $ values in this 6 to 110 nm thickness range; the reflection coefficient is smaller in Fe/glass (R ≈ 0.40) than in Fe/Si(100) (R ≈ 0.65). Saturation field and strain values confirm that Fe films have a stress induced magnetic anisotropy. Coercive field H C values range from 2.45 Oe for Fe/Si(100) to 17.65 Oe for Fe/Si(111) for the same Fe thickness (45 nm).

(Received August 1 2009)

(Accepted September 28 2009)

(Online publication October 30 2009)

PACS:

  • 75.50.Bb – Fe and its alloys;
  • 75.70.Ak – Magnetic properties of monolayers and thin films;
  • 73.61.-r – Electrical properties of specific thin films;
  • 75.60.Jk – Magnetization reversal mechanisms

A_Layadi@yahoo.fr