The European Physical Journal Applied Physics

Table of Contents - April 2010 - Volume 50, Issue 01 (Focus on Electrical Contacts)  

Semiconductors and Devices

Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface

H. Gonga1, X. Haoa1, W. Xiaa2, Y. Wua1 and X. Xua1a2

State Key Lab. of Crystal Materials, Shandong University, Shanda South Road 27, 250100, Jinan, P.R. China

Shandong Huaguang Optoelectronics Company, Ltd., Tianchen Road 1835, 250101, Jinan, P.R. China

Abstract

A simple and effective method is presented to fabricate surface-roughened InGaN/GaN-based light emitting diodes (LEDs) epistructure using annealing-formed, random-distributed Au particle arrays as dry etching mask. The shapes of GaN nanoislands, with horizontal diameters of 100–500 nm and vertical depths up to 140 nm, are determined by Au mask particles. Importantly, this roughened surface exhibits strong photoluminescence (PL) light-output enhancement by a factor of more than 1.6 orders of magnitude. This method will put forward new promising applications in the electroluminescent devices, especially in solid state lighting.

(Received December 17 2009)

(Accepted January 8 2010)

(Online publication February 26 2010)

xphao@sdu.edu.cn xuxg@inspur.com